Product Summary

The BFP520E6327 is a NPN Silicon RF Transistor.

Parametrics

Absolute maximum ratings: (1)Collector-emitter voltage:2.5 V; (2)Collector-base voltage:10V; (3)Emitter-base voltage:1V; (4)Collector current:40 mA; (5)Base current:4mA; (6)Total power dissipation:100 mW; (7)Junction temperature:150℃; (8)Ambient temperature:-65℃ to 150℃; (9)Storage temperature:-65℃ to 150℃.

Features

Features: (1)For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V; (2)Outstanding Gms = 23 dB; (3)Noise Figure F = 0.95 dB; (4)For oscillators up to 15 GHz; (5)Transition frequency fT = 45 GHz; (6)Gold metallization for high reliability; (7)SIEGET 45 - Line, 45 GHz fT - Line.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
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BFP520E6327
BFP520E6327


TRANS NPN RF 2.5V SOT-343

Data Sheet

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BFP520
BFP520

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BFP520E6327
BFP520E6327


TRANS NPN RF 2.5V SOT-343

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BFP540FE6327
BFP540FE6327

Infineon Technologies

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