(China (Mainland))
Product Summary
The K4M561633G-BN75 is a 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Parametrics
Absolute maximum ratings: (1)Voltage on any pin relative to Vss, VIN, VOUT: -1.0 ~ 4.6 V; (2)Voltage on VDD supply relative to Vss ,VDD, VDDQ: -1.0 ~ 4.6 V; (3)Storage temperature, TSTG: -55 ~ +150 ℃; (4)Power dissipation, PD: 1.0 W; (5)Short circuit current, IOS: 50 mA.
Features
Features: (1)3.0V & 3.3V power supply; (2)LVCMOS compatible with multiplexed address; (3)Four banks operation; (4)MRS cycle with address key programs; (5)EMRS cycle with address key programs.; (6)All inputs are sampled at the positive going edge of the system clock; (7)Burst read single-bit write operation.; (8)Special Function Support; (9)DQM for masking; (10)Auto refresh; (11)64ms refresh period (8K cycle); (12)Commercial Temperature Operation (-25℃ ~ 70℃); (13)Extended Temperature Operation (-25℃ ~ 85℃); (14)54Balls FBGA ( -RXXX -Pb, -BXXX -Pb Free).
Diagrams
 |
 K4M511533E-Y(P)C/L/F |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K4M511633E-Y(P)C/L/F |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K4M51163LE-Y(P)C/L/F |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K4M513233E-M(E)C/L/F |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K4M51323LE-M(E)C/L/F |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K4M56163PE-R(B)G/F |
Other |
|
Data Sheet |
Negotiable |
|
||||
